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[Thin Film Part6] ALD Basics

Atomic Layer Deposition (ALD)

Thin-film deposition

ALD Precursor

ALD Process

Surface reactions

Self-limiting reactions

Sequential pulsing

Surface saturation

Reactant adsorption

Purging

ALD Temperature Window

Film growth

Uniformity

Conformality

Precursor delivery

Reaction kinetics

Film thickness control

Thin-film applications

Precursor chemistry

Deposition rate

Film quality

ALD reactor

Growth mechanism

In-situ monitoring

Step coverage

ALD equipment

Автор: SemiSlides

Загружено: 23 июн. 2023 г.

Просмотров: 3 191 просмотр

Описание:

Welcome back to the "Thin Film Series," where we uncover the pivotal materials and processes in semiconductor device fabrication. In this episode, we explore Atomic Layer Depression (ALD)—a sophisticated technique essential for the ultra-fine coating of semiconductor surfaces. ALD's ability to deposit atomically precise layers makes it a cornerstone in semiconductor manufacturing. Join us as we decode the mechanics, history, and applications of ALD, giving you a comprehensive understanding of its role and advancements in the industry. By the end of this video, you'll appreciate how ALD technology shapes the development of semiconductor components. Whether you're just starting out, a dedicated hobbyist, or a professional in the field, this episode will deepen your knowledge and expand your view on ALD. Remember to like, subscribe, and click the bell icon to get notifications for our future content. Below are the chapters of this video; click on any timestamp to navigate directly to that section.

Episode Outline:

1. Introduction to Atomic Layer Deposition (ALD)
[0:00] Intro: Unpacking the essentials of ALD.
[1:20] Process Choice: Comparing CVD, PVD, and ALD.
[4:08] ALD Overview: Key features and mechanisms.
[6:25] ALD History: Tracing its evolution from inception to industrial use.
[8:12] Shift to ALD: Transition from CVD and PVD in semiconductor manufacturing (1960-2020).

2. Thermal ALD
[13:09] Adsorption Dynamics: The roles of physisorption and chemisorption in ALD.
[14:42] ALD Growth Characteristics: Exploring Growth Per Cycle (GPC).
[16:29] GPC Variables: Influence of pulse time.
[18:53] GPC Optimization: Effects of purge time and temperature.
[20:33] Cycle Dependency: Understanding how ALD cycles influence growth.
[22:46] Step Coverage Optimization: Utilizing heavy precursor dosing in DRAM capacitors.

3. Plasma ALD (PEALD)
[24:45] PEALD Overview: Introduction to Plasma Enhanced ALD.
[29:41] PEALD Advantages and Disadvantages.

4. ALD Equipment
[31:50] ALD System Configuration.
[33:52] Precursor Delivery: Key components and mechanisms.
[35:32] Operational Cycle: Demonstrating the ALD process within the delivery system.

5. ALD Precursor
[38:05] Basics of ALD Precursors.
[40:02] Ideal Precursor Requirements.
[42:49] Precursor Ligands: Varieties and their roles.
[44:50] Application Types: Usage in Si-based, High-k, and Metal Films.

[Thin Film Part6] ALD Basics

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