Development of GaN based Solid State Power Amplifiers up to 1kW CW
Автор: Interlligent UK
Загружено: 2019-12-15
Просмотров: 1815
Avtar Virdee (Microwave Technology Ltd) presenting at Interlligent UK's 2019 RF Design Seminar. Gallium Nitride (GaN) power devices are now extensively used in the realisation of solid state power amplifiers that are employed in radar systems, electronic warfare systems, space systems, medical, communication systems and industrial heating. This presentation describes the design, implementation and measured results of GaN solid state power amplifiers operating across S-Band, C-Band, X-Band and Ku-Band with output power levels ranging from 20 W to 1 kW, and operating in pulse and continuous wave (CW) mode. The GaN devices constituting the S-Band, C-Band, X-Band and Ku-Band amplifier are based on commercial off-the-shelf packaged and bare die devices that are ITAR free.
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