TSMC, Intel, Samsung Foundry @ 2nm Era… Differences in GAA | Nano Sheet/Wire | MBCFET, RibbonFET

We take a closer look at the technical differences among TSMC, Intel, and Samsung Foundry as they enter the 2nm era. The transition from FinFET to GAA (Gate-All-Around) structures and each company’s unique strategies are analyzed in depth. TSMC’s Nano Sheet, Samsung’s MBCFET (Multi-Bridge Channel FET), and Intel’s RibbonFET each reflect distinctive design philosophies.

These technologies are crucial for achieving smaller chip sizes and higher power efficiency. In the video, we explore the physical structural differences between Nano Wire and Nano Sheet and discuss the implications for performance. We also compare each technology’s competitiveness in terms of power consumption and performance.

#tsmc #Samsung #Intel

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Edited by wlsdl

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