Wide Bandgap Semiconductor Materials & Microwave PAs - Webinar
Автор: Explore RF
Загружено: 2012-02-02
Просмотров: 52299
Find out more at http://explorerf.com/gallium-nitride1.... This is a FREE webinar on wide bandgap semiconductor materials and devices with a specific focus on Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) as applied to Microwave Power Amplifiers. The topics presented in this webinar are summarised below:
Introduction
High Power Microwave PAs
Vacuum Electron Devices VS Solid State Transistors
Solid State PAs
Performance Limitations
Desirable Semiconductor Material Properties
Wide Bandgap Materials (SiC, GaN, Diamond)
High Electron Mobility Transistors (HEMTs)
Heterostructures and Modulation Doping
Performance Enhancements at Microwave Frequencies
Gallium Nitride (GaN) HEMTs
Structure
Pros & Cons
Polarisation Effects
Surface States
Virtual Gate
Buffer Traps
Current Collapse
Challenges of Pulse I-V characterisation
Drain Current Transients
Experimental Examples: Cree and Nitronex
Improvements
Reducing Trapping Effects
Enhancing Performance with Field Plates
Commercial availability
Conclusions
Find out more at http://explorerf.com/gallium-nitride....
The videos featured in my multimedia textbook "Conquer Radio Frequency" are now available on my YouTube channel!
They are presented in sections, each corresponding to one of the five chapters, which may be easily accessed from the channel's home page / rfmicrowave . A link to download the e-book is also provided in each video description.
The material may also be accessed at http://explorerf.com/crf.html
Francesco Fornetti
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