[Electronics] Dopant profiling of SiC semiconductor

Dopant profile of SiC semiconductor was revealed by low energy ion beam processing. While 5 kV FIB allows dopant imaging along the gate and substrate, 0.5 kV Ar ion milling enables observation of p-type and n-type layers across the SiC p-n junction.

Available instruments for this measurement are :
FIB-SEM-Ar Triple Beam system
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