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EuMW 20 - Modeling of High-Power RF Transistors and Applications
Автор: MauryMicrowave
Загружено: 2021-01-16
Просмотров: 4686
Описание:
Mitra Gilasgar, Principle Design Engineer at Ampleon, introduces a modeling flow used to model high-power RF transistors. Mitra starts with power amplifier basics, an introduction to LDMOS technology and why we need transistor models. Mitra then proceeds to explain the measurements required for model extraction, including fundamental and harmonic load pull. Mitra goes on to discuss modeling parasitics, packaging and bond wires. Finally, Mitra discusses model fitting and modeling transistor ruggedness.
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