SORS: Experimentally Understanding and Efficiently Mitigating DRAM Read Disturbance
Автор: BSC CNS
Загружено: 2025-08-22
Просмотров: 17
Speaker: Ataberk Olgun, 4th year PhD student in the SAFARI Research Group at ETH Zurich, advised by Onur Mutlu.
DRAM chips are increasingly vulnerable to read disturbance phenomena (e.g., RowHammer and RowPress), where repeatedly accessing or keeping open a DRAM row causes bitflips in nearby rows, due to DRAM technology scaling. Even though many prior works develop various RowHammer solutions, these solutions incur non-negligible and increasingly higher system performance, energy, and hardware area overheads as RowHammer vulnerability worsens. In this talk, we will present recent cutting-edge experimental studies of and solutions to read disturbance.
Further information here: https://www.bsc.es/4kN
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