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Powerful Knowledge 8 - Gate oxide and threshold voltage instabilities in SIC power MOSFETs
Автор: Electronic Minds
Загружено: 2023-01-22
Просмотров: 1879
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In this episode, Jose from Warwick University discusses some of the issues around behaviour of gate oxide in silicon carbide power MOSFETs. The control gate of silicon carbide is more fragile than normal FETs so care must be taken to ensure drive voltages are carefully managed. Other effects such as gate threshold voltage shift are discussed in some depth.
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