NXP MRFX1K80 RF Power LDMOS Transistor | Featured Product Spotlight

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NXP’s MRFX1K80H is an 1800 W, 65 V wideband RF power LDMOS transistor designed for high VSWR ISM, VHF broadcast, and aerospace applications. The device has a wideband, unmatched input and output from 1.8 to 470 MHz that can be used in single-ended or push-pull configurations, and the 1800 W output rating is true for continuous wave and pulsed signals.

The MRFX1K80H is based on NXP’s 65 V LDMOS technology. By increasing VDD to 65 V, it’s possible to increase output power while keeping impedance at reasonable values that are more easily matched to 50 Ω. (Graphic: Reusability) In fact, at the higher voltage, the impedance of the 1800 W 65 V transistor is very close to NXP’s 1250 W and 1500 W 50 V transistors. And because the devices are also pin-compatible, it’s possible to upgrade existing lower power designs to 1800 W with minimal or no retuning. For more information, as well as all the latest All About Circuits projects and articles, visit the official website at http://www.allaboutcircuits.com/

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