Getting below 10nm by breaking the low k barrier ... with Hash Pakbaz Ph.D.

Now that the semiconductor industry has settled on the finFET, it's back to fretting about interconnect, which has become the larger limitation below 10 and 7nm due to power loss and signal integrity. That's put the focus back on dielectrics and getting to a lower k value. Liquid Phase Self-Assembly (LPSA) technology is possibly the answer. The finished material is essentially the same as today’s CVD films. As the film self-assembles, it introduces ordered porosity. This makes the finished film structurally stronger at larger pore sizes, thus lowering the dielectric constant (k) value to 2.2 and below.
For more information, go to the link-
http://electronics.wesrch.com/wequest...