ROHM Semiconductor | BV1HB008EFJ-C Digital Datasheet
Автор: ROHM Semiconductor
Загружено: 10 мар. 2025 г.
Просмотров: 6 316 просмотров
The BV1HB008EFJ-C single channel 9mΩ Intelligent High Side Power Device integrates an Overcurrent load protection, a dual Temperature Shutdown mechanism which limits the internal thermal transients and reduces the mechanical stress of the IC, and a smart Active-Clamp circuit to dissipate the magnetic energy while switching off inductive loads and to protect internal circuits from overvoltage surges. Embedded Current Sense and Diagnostic features provide real time load current information and open or short circuit feedback in both on and off state. A 3V and 5V CMOS compatible input pin offers direct microcontroller connection without special interfaces or level shifters. These in conjunction with a wide input voltage range make the High Side IPD a high performance component suitable for 12V battery connected automotive applications.
https://www.rohm.com/products/power-m...

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