A brief introduction to e-beam lithography
Автор: MIT.nano
Загружено: 2023-02-28
Просмотров: 13719
As part of MIT's Independent Activities Period (IAP), Mark Mondol, Assistant Director for the Nano Structures Laboratory; and Research Scientist Juan Ferrera led a hybrid class on e-beam lithography.
E-beam lithography enables advanced semiconductor chips; without e-beam lithography minimum features sizes would be limited to approximately 200 nm. In research environments e-beam lithography allows direct write, maskless lithography enabling quick and relatively cheap design changes.
This talk introduces the basics of e-beam lithography and pattern transfer, including electron energy, material interaction, limits to resolution, e-beam resists, throughput, proximity effect correction and characteristics of different e-beam lithography tools.
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