Reliability and Performance in VLSI

This Reliability Marathon Episode brings together the most critical aspects of device reliability and physical integrity in modern VLSI CMOS design. We begin by exploring the fundamentals of reliability and the main failure mechanisms in CMOS technology — including Time-Dependent Dielectric Breakdown (TDDB), Negative Bias Temperature Instability (NBTI), Hot Carrier Injection, Electromigration, ESD, Latchup, and Self-Heating Effects. Next, we take a closer look at Electromigration and IR-Drop, two of the most crucial issues that determine chip lifespan and performance stability. Through practical insights, we explain their root causes, detection methods, and effective design-level mitigation. We then dive deep into ESD Phenomenon, understanding how static discharge damages circuits, and how various ESD protection schemes safeguard sensitive devices. Finally, we wrap up with an in-depth look at the Antenna Effect, its physics, causes during plasma etching, and the mitigation techniques used to prevent gate oxide damage. This marathon serves as a complete guide to understanding how VLSI reliability is maintained from layout to silicon, combining theory, failure physics, and real-world prevention strategies.

Chapters:
00:00:00 Beginning
00:01:21 What is Reliability in VLSI?
00:42:10 EM, IR & Ground bounce
02:17:24 What is ESD?
02:48:38 What is Antenna Effect?

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#semiconductortechnology
#semiconductordevices

This video also suggests:
CMOS reliability failure mechanisms explained,
VLSI reliability full course for beginners,
Time Dependent Dielectric Breakdown TDDB tutorial,
NBTI effect in CMOS transistors simple explanation,
Hot Carrier Injection in VLSI devices,
Electromigration in VLSI with real examples,
IR drop analysis and mitigation techniques,
ESD protection design in CMOS circuits,
Latchup prevention in integrated circuits,
Self heating effect in advanced CMOS nodes,
Antenna effect in VLSI during plasma etching,

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